4-196

File Number

1577.3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

IRF620

5.0A, 200V, 0.800 Ohm, N-Channel

Power MOSFET

This N-Channel enhancement mode silicon gate power field

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a specified level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA9600.

Features

• 5.0A, 200V

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC TO-220AB

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRF620

TO-220AB

IRF620

NOTE:

When ordering, use the entire part number.

G

D

S

GATE

DRAIN (FLANGE)

SOURCE

DRAIN

Data Sheet

June 1999