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IRF430 Fiches technique(PDF) 1 Page - Intersil Corporation |
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IRF430 Fiches technique(HTML) 1 Page - Intersil Corporation |
1 / 7 page 1 File Number 1572.4 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF430 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17415. Features • 4.5A, 500V •rDS(ON) = 1.500Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-204AA Ordering Information PART NUMBER PACKAGE BRAND IRF430 TO-204AA IRF430 NOTE: When ordering, use the entire part number. G D S DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) Data Sheet March 1999 |
Numéro de pièce similaire - IRF430 |
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Description similaire - IRF430 |
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