2SC2618RCTL-E datasheet(2/6 Pages) RENESAS

No de pièce	2SC2618RCTL-E

Description	Silicon NPN Epitaxial

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Fabricant	RENESAS [Renesas Technology Corp]

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2 / 6 page

2SC2618

Preliminary

R07DS0273EJ0400 Rev.4.00

Page 2 of 5

Jan 10, 2014

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

35

—

V

IC = 10

μA, IE = 0

Collector to emitter breakdown voltage

V(BR)CEO

35

—

V

IC = 1 mA, RBE =

∞

Emitter to base breakdown voltage

V(BR)EBO

4

—

V

IE = 10

μA, IC = 0

Collector cutoff current

ICBO

—

0.5

μA

VCB = 20 V, IC = 0

DC current transfer ratio

hFE1*

1

100

—

320

VCE = 3 V, IC = 10 mA

(Pulse test)

hFE2

10

—

VCE = 3 V, IC = 500 mA

(Pulse test)

Collector to emitter saturation voltage

VCE(sat)

—

0.2

0.6

V

IC = 150 mA, IB = 15 mA

(Pulse test)

Base to emitter voltage

VBE

—

0.64

—

V

VCE = 3 V, IC = 10 mA

(Pulse test)

Note:

1. The 2SC2618 is grouped by hFE1 as follows.

Grade

C

D

Mark

RC

RD

hFE1

100 to 200

160 to 320

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