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IRF321 Fiches technique(PDF) 3 Page - Intersil Corporation |
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IRF321 Fiches technique(HTML) 3 Page - Intersil Corporation |
3 / 7 page 5-3 Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) - 450 - pF Output Capacitance COSS - 100 - pF Reverse Transfer Capacitance CRSS -20 - pF Internal Drain Inductance LD Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances - 5.0 - nH Internal Source Inductance LS Measured from the Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad - 12.5 - nH Thermal Resistance Junction to Case RθJC - - 2.5 oC/W Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 30 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Continuous Source to Drain Current ISD Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode - - 3.3 A Pulse Source to Drain Current (Note 3) ISDM - - 13 A Source to Drain Diode Voltage (Note 2) VSD TC = 25 oC, I SD = 3.3A, VGS = 0V, (Figure 13) - - 1.8 V Reverse Recovery Time trr TJ = 25 oC, I SD = 3.3A, dISD/dt = 100A/µs 120 270 600 ns Reverse Recovery Charge QRR TJ = 25 oC, I SD = 3.3A, dISD/dt = 100A/µs 0.64 1.4 3.0 µC NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25 oC, L = 31mH, R G = 25Ω, peak IAS = 3.3A. See Figures 15, 16. Electrical Specifications TC = 25 oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS LD LS D S G D S G IRF320, IRF321, IRF322, IRF323 |
Numéro de pièce similaire - IRF321 |
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Description similaire - IRF321 |
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