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MTB110P10L3-0-T3-G Fiches technique(PDF) 2 Page - Cystech Electonics Corp. |
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MTB110P10L3-0-T3-G Fiches technique(HTML) 2 Page - Cystech Electonics Corp. |
2 / 9 page CYStech Electronics Corp. Spec. No. : C968L3 Issued Date : 2014.12.23 Revised Date : Page No. : 2/9 MTB110P10L3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage VDS -100 Gate-Source Voltage VGS ±20 V Continuous Drain Current @ TC=25 °C -10.8 Continuous Drain Current @ TC=100 °C ID -6.8 Continuous Drain Current @ TA=25 °C -3.8 *2 Continuous Drain Current @ TA=70 °C IDSM -3.0 *2 Pulsed Drain Current IDM -20 *1 Avalanche Current IAS -30 A Avalanche Energy @ L=0.1mH, ID=-30A, VDD=-25V EAS 45 *1 mJ 3.1 *2 W Total Power Dissipation (TA=25℃) Linear Derating Factor PDSM 0.02 W/ °C Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 5 Thermal Resistance, Junction-to-ambient, max Rth,j-a 40 *2 °C/W Note : *1 . Pulse width limited by maximum junction temperature *2 . Surface mounted on 1 in² copper pad of FR-4 board; 120 °C/W when mounted on minimum copper pad Characteristics (Tj=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -100 - - V VGS=0V, ID=-250μA ΔBVDSS/ΔTj - -0.08 - V/ °C Reference to 25 °C, ID=-250μA VGS(th) -1.0 - -2.5 V VDS = VGS, ID=-250μA GFS - 10 - S VDS =-10V, ID=-4A IGSS - - ± 100 nA VGS=±20V IDSS - - -1 VDS =-80V, VGS =0V IDSS - - -25 μA VDS =-80V, VGS =0V, Tj=70 °C - 85 115 VGS =-10V, ID=-4.5A *RDS(ON) - 96 130 mΩ VGS =-4.5V, ID=-4A Dynamic *Qg - 30 - *Qgs - 3.7 - *Qgd - 7.2 - nC VDS=-80V, ID=-3.8A, VGS=-10V *td(ON) - 8.8 - *tr - 17.6 - ns VDS=-50V, ID=-1A,VGS=-10V, |
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