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MTB110P10L3-0-T3-G Fiches technique(PDF) 2 Page - Cystech Electonics Corp.

No de pièce MTB110P10L3-0-T3-G
Description  P-Channel Enhancement Mode Power MOSFET
Download  9 Pages
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Fabricant  CYSTEKEC [Cystech Electonics Corp.]
Site Internet  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB110P10L3-0-T3-G Fiches technique(HTML) 2 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C968L3
Issued Date : 2014.12.23
Revised Date :
Page No. : 2/9
MTB110P10L3
CYStek Product Specification
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
-100
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current @ TC=25
°C
-10.8
Continuous Drain Current @ TC=100
°C
ID
-6.8
Continuous Drain Current @ TA=25
°C
-3.8 *2
Continuous Drain Current @ TA=70
°C
IDSM
-3.0 *2
Pulsed Drain Current
IDM
-20
*1
Avalanche Current
IAS
-30
A
Avalanche Energy @ L=0.1mH, ID=-30A, VDD=-25V
EAS
45
*1
mJ
3.1
*2
W
Total Power Dissipation (TA=25℃)
Linear Derating Factor
PDSM
0.02
W/
°C
Operating Junction and Storage Temperature
Tj, Tstg
-55~+150
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
5
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
40 *2
°C/W
Note : *1
. Pulse width limited by maximum junction temperature
*2
. Surface mounted on 1 in² copper pad of FR-4 board; 120
°C/W when mounted on minimum copper pad
Characteristics (Tj=25
°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
-100
-
-
V
VGS=0V, ID=-250μA
ΔBVDSS/ΔTj
-
-0.08
-
V/
°C
Reference to 25
°C, ID=-250μA
VGS(th)
-1.0
-
-2.5
V
VDS = VGS, ID=-250μA
GFS
-
10
-
S
VDS =-10V, ID=-4A
IGSS
-
-
±
100
nA
VGS=±20V
IDSS
-
-
-1
VDS =-80V, VGS =0V
IDSS
-
-
-25
μA
VDS =-80V, VGS =0V, Tj=70
°C
-
85
115
VGS =-10V, ID=-4.5A
*RDS(ON)
-
96
130
VGS =-4.5V, ID=-4A
Dynamic
*Qg
-
30
-
*Qgs
-
3.7
-
*Qgd
-
7.2
-
nC
VDS=-80V, ID=-3.8A, VGS=-10V
*td(ON)
-
8.8
-
*tr
-
17.6
-
ns
VDS=-50V, ID=-1A,VGS=-10V,


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