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UPC2714T Datasheet(Fiches technique) 1 Page - NEC

Numéro de pièce UPC2714T
Description  1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
Télécharger  12 Pages
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Fabricant  NEC [NEC]
Site Internet  http://www.nec.com/
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The UPC2714T and UPC2715T are Silicon Monolithic inte-
grated circuits manufactured using the NESAT III process.
These devices are suitable for applications which require low
power consumption and wide frequency operation. They are
designed for low cost, low power consumption gain stages in
cellular radios, GPS receivers, and PCN applications.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
DESCRIPTION
LOW POWER CONSUMPTION
SILICON MMIC AMPLIFIER
UPC2714T
UPC2715T
FEATURES
• LOW POWER CONSUMPTION:
15 mW (VCC = 3.4 V, ICC = 4.5 mA)
• HIGH POWER GAIN: 20 dB (UPC2715T)
• WIDE FREQUENCY RESPONSE:
2 GHz (UPC2714T)
• INTERNAL CURRENT REGULATION MINIMIZES GAIN
CHANGE OVER TEMPERATURE
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
GAIN vs. FREQUENCY
UPC2715
UPC2714
0
0.5
1.0
1.5
2.0
20
15
10
5
0
Frequency, f (GHz)
PART NUMBER
UPC2714T
UPC2715T
PACKAGE OUTLINE
T06
T06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
ICC
Circuit Current
mA
3.3
4.5
5.7
3.3
4.5
5.7
GS
Small Signal Gain
dB
8.5
11.5
15.5
16
19
23
fU
Upper Limit Operating Frequency
(The gain at fU is 3 dB down from the gain at 0.1 GHz)
GHz
1.4
1.8
0.9
1.2
∆GS
Gain Flatness, f = 0.1~ 0.6 GHz
dB
±1.0
±1.0
PSAT
Saturated Output Power
dBm
-10
-7
-9
-6
NF
Noise Figure
dB
5.0
6.5
4.5
6.0
RLIN
Input Return Loss
dB
10
13
12
17
RLOUT
Output Return Loss
dB
5
8
5
8
ISOL
Isolation
dB
22
27
28
33
∆GT
Gain-Temperature Coefficient
dB/
°C
+0.006
+0.006
RTH
Thermal Resistance (Junction to Ambient)
°C/W
200
200
ELECTRICAL CHARACTERISTICS (TA = 25°C, f = 0.5 GHz, VCC = 3.4 V)
California Eastern Laboratories




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