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2SC3357-HF Fiches technique(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC3357-HF Fiches technique(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 3 page SMD Type www.kexin.com.cn 1 Transistors ■ Features ● Low noise and high gain ● High power gain ● Large Ptot 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 Emitter - Base Voltage VEBO 3 Collector Current - Continuous IC 100 mA Collector Power Dissipation PC 1.2 W Junction to Ambient Resistance Rth (j-a) 62.5 ℃ /W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ℃ ■ Electrical Characteristics Ta = 25℃ Note.1: Pulse measurement: PW ≤ 350 us, Duty Cycle ≤ 2% ■ Classification of hfe Type 2SC3357-H-HF 2SC3357-F-HF 2SC3357-E-HF Range 50-100 80-160 125-250 Marking RH F RF F RE F Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA, IE= 0 20 Collector- emitter breakdown voltage VCEO Ic= 1 mA, IB= 0 12 Emitter - base breakdown voltage VEBO IE= 100μA, IC= 0 3 Collector-base cut-off current ICBO VCB= 20V , IE= 0 1 Emitter cut-off current IEBO VEB= 3V , IC=0 1 Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB=5mA 0.4 Base - emitter saturation voltage VBE(sat) IC=50 mA, IB=5mA 1.2 DC current gain (Note.1) hFE VCE= 10V, IC= 20mA 50 250 Insertion Power Gain |S21e| VCE = 10V, IC = 20mA, f= 1GHz 9 VCE = 10V, IC = 7mA, f= 1GHz 1.1 VCE = 10V, IC = 40mA, f= 1GHz 1.8 3 Reverse Transfer Capacitance Cre VCB= 10V, IE= 0,f=1MHz 1 pF Transition frequency fT VCE= 10V, IC= 20mA 6.5 GHz V uA Noise Figure NF dB V 2 ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish NPN Transistors 2SC3357-HF |
Numéro de pièce similaire - 2SC3357-HF |
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Description similaire - 2SC3357-HF |
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