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2SC3649-S Fiches technique(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC3649-S Fiches technique(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 3 page SMD Type www.kexin.com.cn 1 Transistors NPN Transistors 2SC3649 ■ Features ● High breakdown voltage and large current capacity. ● Complementary to 2SA1419 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1.5 Peak Collector Current ICM 2.5 Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ℃ A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA, IE= 0 180 Collector- emitter breakdown voltage VCEO Ic= 1 mA,RBE= ∞ 160 Emitter - base breakdown voltage VEBO IE= 100μA, IC= 0 6 Collector-base cut-off current ICBO VCB= 120 V , IE= 0 1 Emitter cut-off current IEBO VEB= 4V , IC=0 1 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.13 0.45 Base - emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 0.85 1.2 VCE= 5V, IC= 100mA 100 400 VCE= 5V, IC= 10mA 80 Turn-ON Time ton 40 Storage Time tstg 1200 Fall Time tf 80 Collector output capacitance Cob VCB= 10V,f=1MHz 14 pF Transition frequency fT VCE= 10V, IC= 50mA 120 MHz DC current gain hFE V uA V See sepcified Test Circuit. ns ■ Classification of hfe(1) Type 2SC3649-R 2SC3649-S 2SC3649-T Range 100-200 140-280 200-400 Marking CER CES CET |
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