2SC3649-S datasheet(1/3 Pages) KEXIN

No de pièce	2SC3649-S

Description	NPN Transistors

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Fabricant	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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Transistors

NPN Transistors

2SC3649

■

Features

●

High breakdown voltage and large current capacity.

●

Complementary to 2SA1419

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

180

Collector - Emitter Voltage

VCEO

160

Emitter - Base Voltage

VEBO

6

Collector Current - Continuous

IC

1.5

Peak Collector Current

ICM

2.5

Collector Power Dissipation

PC

500

mW

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

℃

A

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

180

Collector- emitter breakdown voltage

VCEO

Ic= 1 mA，RBE= ∞

160

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

6

Collector-base cut-off current

ICBO

VCB= 120 V , IE= 0

1

Emitter cut-off current

IEBO

VEB= 4V , IC=0

1

Collector-emitter saturation voltage

VCE(sat) IC=500mA, IB=50mA

0.13

0.45

Base - emitter saturation voltage

VBE(sat) IC=500mA, IB=50mA

0.85

1.2

VCE= 5V, IC= 100mA

100

400

VCE= 5V, IC= 10mA

80

Turn-ON Time

ton

40

Storage Time

tstg

1200

Fall Time

tf

80

Collector output capacitance

Cob

VCB= 10V,f=1MHz

14

pF

Transition frequency

fT

VCE= 10V, IC= 50mA

120

MHz

DC current gain

hFE

V

uA

V

See sepcified Test Circuit.

ns

■

Classification of hfe(1)

Type

2SC3649-R

2SC3649-S

2SC3649-T

Range

100-200

140-280

200-400

Marking

CER

CES

CET

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2SC3649-S Fiches technique(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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