BC856BS_15 datasheet(2/5 Pages) KEXIN

No de pièce	BC856BS

Description	PNP Transistors

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Fabricant	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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Transistors

PNP Transistors

BC856BS (KC856BS)

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-80

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA， IB=0

-65

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-6

VCB= -50 V , IE=0

-15

nA

VCB= -30 V , IE=0,TJ=150℃

-5

uA

Emitter cut-off current

IEBO

VEB= -6V , IC=0

-100

nA

IC=-10 mA, IB=-0.5mA

-55

-100

IC=-100 mA, IB=-5mA

-200 -300

IC=-10 mA, IB=-0.5mA

-755 -850

IC=-100 mA, IB=-5mA

-900

VCE= -5V, IC= -2mA

-600 -650 -750

VCE= -5V, IC= -10mA

-820

hFE(1)

VCE= -5V, IC= -10uA

270

hFE(2)

VCE=- 5V, IC= -2mA

200

290

450

Collector capacitance

Cc

VCB= -10V, IE=ie=0,f=1MHz

2.3

pF

Emitter capacitance

Ce

VEB= -0.5V, IC=ic=0,f=1MHz

10

VCE = -5 V; IC = -0.2 mA;

RS = 2 kΩ; f = 10 Hz to 15.7 KHz

1.6

VCE = -5 V; IC = -0.2 mA;

RS = 2 kΩ; f = 1 KHz ,B=200Hz

2.9

Transition frequency

fT

VCE= -5V, IC= -10mA,f=100MHz

100

MHz

V

Collector-base cut-off current

ICBO

Collector-emitter saturation voltage

VCE(sat)

Base - emitter saturation voltage

VBE(sat)

Base - emitter voltage

VBE

mV

dB

NF

Noise figure

DC current gain

■

Marking

*E6

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