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UPC1652G Fiches technique(PDF) 1 Page - NEC |
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UPC1652G Fiches technique(HTML) 1 Page - NEC |
1 / 8 page Document No. P12443EJ5V0DS00 (5th edition) Date Published November 1999 N CP(K) Printed in Japan DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µµµµPC1652G SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT WIDE BAND AMPLIFIER DATA SHEET © 1983, 1999 The mark shows major revised points. DESCRIPTION PIN CONNECTIONS The µPC1652G is a silicon monolithic integrated circuit especially designed as a wide band amplifier convering HF band through UHF band. FEATURES • Excellent frequency response : 1 200 MHz TYP. @ 3 dB down • High power gain : 18 dB TYP. @ f = 500 MHz • Low voltage operation : VCC = 5 V • SOP package ABSOLUTE MAXIMUM RATINGS (TA = +25 °°°°C) Supply Voltage VCC 7V Total Power dissipation PD 440 mW Operating Ambient Temperature TA −20 to +75 °C Storage Temperature Tstg −40 to +125 °C EQUIVALENT CIRCUIT ELECTRICAL CHARACTERISTICS (TA = +25 °°°°C, VCC = 5 V) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Circuit Current ICC 15 20 25 mA No signals Power Gain GP 16 18 20 dB f = 500 MHz Noise Figure NF 5.5 6.5 dB f = 500 MHz Band Width BW 1000 1200 MHz 3 dB down below flat gain Isolation ISO 23 26 dB f = 500 MHz Input Return Loss S11 17 20 dB f = 500 MHz Output Return Loss S22 12 15 dB f = 500 MHz Maximum Output Level PO 3 5 dBm f = 500 MHz NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. 1 INPUT 2 GND 3 GND 4 GND 8 GND 7VCC 6VCC 5 OUTPUT VCC OUT GND IN |
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