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2SA1730-S Fiches technique(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

No de pièce 2SA1730-S
Description  PNP Transistors
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Fabricant  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Site Internet  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SA1730-S Fiches technique(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
1
Transistors
PNP Transistors
2SA1730
Features
Large current capacity.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Small-sized package.
1.Base
2.Collector
3.Emitter
1.70 0.1
0.42 0.1
0.46 0.1
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-50
Collector - Emitter Voltage
VCEO
-40
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
IC
-3
Collector Current -Pulse
ICp
-6
Collector Power Dissipation (Note.1)
PC
1.5
W
Junction Temperature
TJ
150
Storage Temperature range
Tstg
-55 to 150
V
A
Note.1: Mounted on ceramic board (250mm X 0.8mm)
2
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= -100 uA, IE=0
-50
Collector- emitter breakdown voltage
VCEO
Ic= -1 mA,RBE= ∞
-40
Emitter - base breakdown voltage
VEBO
IE= -100 uA, IC=0
-5
Collector-base cut-off current
ICBO
VCB= -40 V , IE=0
-1
Emitter cut-off current
IEBO
VEB= -3V , IC=0
-1
Collector-emitter saturation voltage
VCE(sat) IC=-1.5 A, IB=-75 mA
-0.3
-0.8
Base - emitter saturation voltage
VBE(sat) IC=-1.5 A, IB=-75 mA
-0.95 -1.3
hFE(1)
VCE= -2V, IC= -500 mA
70
280
hFE(2)
VCE= -2V, IC= -3 A
25
Turn-on Time
ton
50
100
Storage time
tstg
120
220
Tutn-off time
toff
150
300
Collector output capacitance
Cob
VCB= -10V, f=1MHz
35
pF
Transition frequency
fT
VCE= -2V, IC= -500 mA
300
MHz
See specified Test Circuit
ns
DC current gain
V
uA
V
Classification of hfe(1)
Type
2SA1730-Q
2SA1730-R
2SA1730-S
Range
70-140
100-200
140-280
Marking
AHQ
AHR
AHS


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