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2SA1611-M6 Fiches technique(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

No de pièce 2SA1611-M6
Description  PNP Transistors
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Fabricant  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Site Internet  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SA1611-M6 Fiches technique(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
1
Transistors
PNP Transistors
2SA1611
Features
High DC Current Gain
High Voltage
Complementary to 2SC4177
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-60
Collector - Emitter Voltage
VCEO
-50
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
IC
-100
mA
Collector Power Dissipation
PC
150
mW
Thermal Resistance From Junction To Ambient
RθJA
833
/W
Junction Temperature
TJ
150
Storage Temperature range
Tstg
-55 to 150
V
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= -100 μA, IE=0
-60
Collector- emitter breakdown voltage
VCEO
Ic= -1 mA,IB=0
-50
Emitter - base breakdown voltage
VEBO
IE= -100μA, IC=0
-5
Collector-base cut-off current
ICBO
VCB= -60 V , IE=0
-0.1
Emitter cut-off current
IEBO
VEB= -5V , IC=0
-0.1
Collector-emitter saturation voltage
VCE(sat) IC=-100 mA, IB=-10 mA
-0.3
Base - emitter saturation voltage
VBE(sat) IC=-100 mA, IB=-10 mA
-1.2
Base - emitter voltage
VBE
VCE= -6V, IC= -1mA
-0.58
-0.68
DC current gain
(Note.1)
hFE
VCE= -6V, IC= -1mA
90
600
Collector output capacitance
Cob
VCB= -10V,IE=0, f=1MHz
4.5
pF
Transition frequency
fT
VCE= -6V, IC= -10mA
180
MHz
V
uA
V
Note.1: Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
Classification of hfe
Type
2SA1611-M4
2SA1611-M5
2SA1611-M6
2SA1611-M7
Range
90-180
135-270
200-400
300-600
Marking
M4
M5
M6
M7
1.Base
2.Emitter
3.Collector


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