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2SD1745 Fiches technique(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SD1745 Fiches technique(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 3 page SMD Type www.kexin.com.cn 1 Transistors NPN Transistors 2SD1745 ■ Features ● Satisfactory linearity of foward current transfer ratio hFE ● Low collector to emitter saturation voltage VCE(sat) ● Large collector current IC ● Complementary to 2SB1175 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4 .60 +0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.127 max TO-252 Unit: mm 1 Base 2 Collector 3 Emitter ■ Absolute Maximum Rating s Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 130 Collector - Emitter Voltage VCEO 80 Emitter - Base Voltage VEBO 7 Collector Current - Continuous IC 4 Collector Current - Pulse ICP 8 Collector Power Dissipation Tc=25°C 15 Ta=25°C 1.3 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ℃ A PC W ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA, IE= 0 130 Collector- emitter breakdown voltage VCEO Ic= 10 mA,IB= 0 80 Emitter - base breakdown voltage VEBO IE= 100 uA, IC= 0 7 Collector-base cut-off current ICBO VCB= 100 V , IE= 0 10 uA Emitter cut-off current IEBO VEB= 6V , IC=0 50 Collector-emitter saturation voltage VCE(sat) IC=3 A, IB=150 mA 0.5 Base - emitter saturation voltage VBE(sat) IC=3 A, IB=150 mA 1.5 VCE= 2V, IC= 100 mA 45 VCE= 2V, IC= 1 A 90 260 Turn-ON Time ton 0.5 Storage Time tstg 2.5 Fall Time tf 0.15 Transition frequency fT VCE= 10V, IC= 500mA,f=10MHz 30 MHz IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V us V DC current gain hFE V ■ Classification of hfe(2) Type 2SD1745-Q 2SD1745-P Range 90-180 130-260 |
Numéro de pièce similaire - 2SD1745_15 |
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Description similaire - 2SD1745_15 |
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