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2SA1385-Z Fiches technique(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SA1385-Z Fiches technique(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 3 page SMD Type Transistors 1 Features Low VCE(sat):VCE(sat)=-0.18 V TYP. Absolute Maximum Ratings Ta = 25 ti n U g n it a R l o b m y S r e t e m a r a P V e g a tl o v e s a b -r o t c e ll o C CBO -60 V V e g a tl o v r e tt i m e -r o t c e ll o C CEO -60 V V e g a tl o v e s a b -r e tt i m E EBO -7 V I t n e rr u c r o t c e ll o C C -5 A I * e s l u p t n e rr u c r o t c e ll o C CP -7 A P n o it a p i s s i d r e w o p l a t o T T 10 W T e r u t a r e p m e t n o it c n u J j 150 T e r u t a r e p m e t e g a r o t S stg -55 to +150 * PW 10ms, duty cycle 50%. Electrical Characteristics Ta = 25 * PW 350us, duty cycle 2%. www.kexin.com.cn Marking M L K hFE 100 200 160 320 200 400 ● Complement to 2SC3518-Z PNP Transistors 2SA1385-Z 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4 .60 +0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.127 max TO-252 Unit: mm 1 Base 2 Collector 3 Emitter ■ Classification of hfe Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA, IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1 mA, IB=0 -60 Emitter - base breakdown voltage VEBO IE= -100μA, IC=0 -7 Collector-base cut-off current ICBO VCB= -50 V , IE=0 -10 Emitter cut-off current IEBO VEB= -7V , IC=0 -10 Collector-emitter saturation voltage * VCE(sat) IC=-2A, IB=- 0.2A -0.18 -0.3 Base - emitter saturation voltage * VBE(sat) IC=-2A, IB=- 0.2A -1.2 VCE= -1V, IC= -2A 100 200 400 VCE= -1V, IC= -5A 50 100 Turn-on time ton 0.08 1 Storage time ts 0.55 2.5 Fall time tf 0.18 1 Transition frequency fT VCE= -10V, IC= -0.5A 140 MHz DC current gain * hFE IC=-2A,IB1=-IB2=-0.2A,RL=50Ω, VCC=-10V V V us uA |
Numéro de pièce similaire - 2SA1385-Z_15 |
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Description similaire - 2SA1385-Z_15 |
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