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BC857AT Fiches technique(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

No de pièce BC857AT
Description  PNP Transistors
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Fabricant  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Site Internet  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

BC857AT Fiches technique(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  BC857AT Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
1
Transistors
PNP Transistors
BC857T (KC857T)
Features
Ideally suited for automatic insertion
For Switching and AF Amplifier Applications
1. Base
2. Emitter
3. Collecter
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-50
Collector - Emitter Voltage
VCEO
-45
Emitter - Base Voltage
VEBO
-6
Collector Current - Continuous
IC
-0.1
A
Collector Power Dissipation
PC
150
mW
Junction Temperature
TJ
150
Storage Temperature range
Tstg
-55 to 150
V
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= -100 μA, IE=0
-50
Collector- emitter breakdown voltage
VCEO
Ic= -10 mA, IB=0
-45
Emitter - base breakdown voltage
VEBO
IE= -100μA, IC=0
-6
Collector-base cut-off current
ICBO
VCB= -50 V , IE=0
-0.1
uA
Emitter cut-off current
IEBO
VEB= -6V , IC=0
-0.1
uA
IC=-10 mA, IB=-0.5mA
-0.3
IC=-100 mA, IB=-5mA
-0.65
IC=-10 mA, IB=-0.5mA
-0.7
IC=-100 mA, IB=-5mA
-0.9
VCE= -5V, IC= -2mA
-0.75
VCE= -5V, IC= -10mA
-0.82
DC current gain
hFE
VCE= -5V, IC= -2mA
125
800
Noise figure
NF
VCE=-5V,f=1MHz,Ic=0.2mA
Rs=2KΩ,BW=200HZ
10
dB
Collector output capacitance
Cob
VCB= -10V,f=1MHz
4.5
pF
Transition frequency
fT
VCE= -5 V,IC=-10mA,f=100MHz
100
MHz
V
VBE(sat)
V
Base - emitter saturation voltage
Base-emitter voltage
VBE(on)
Collector-emitter saturation voltage
VCE(sat)
-0.6
Classification of hfe
Type
BC857AT
BC857BT
BC857CT
Range
125-250
220-475
420-800
Marking
3E
3F
3G
SOT-523
m
m
:
t
i
n
U
0.2 +0.05
-0.05
1.0 +0.1
-0.1
1.6 +0.1
-0.1
0.3±0.05
0.5 +0.1
-0.1
0.15±0.05
1
2
3


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