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BC857AT Fiches technique(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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BC857AT Fiches technique(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type www.kexin.com.cn 1 Transistors PNP Transistors BC857T (KC857T) ■ Features ● Ideally suited for automatic insertion ● For Switching and AF Amplifier Applications 1. Base 2. Emitter 3. Collecter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -45 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -0.1 A Collector Power Dissipation PC 150 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA, IE=0 -50 Collector- emitter breakdown voltage VCEO Ic= -10 mA, IB=0 -45 Emitter - base breakdown voltage VEBO IE= -100μA, IC=0 -6 Collector-base cut-off current ICBO VCB= -50 V , IE=0 -0.1 uA Emitter cut-off current IEBO VEB= -6V , IC=0 -0.1 uA IC=-10 mA, IB=-0.5mA -0.3 IC=-100 mA, IB=-5mA -0.65 IC=-10 mA, IB=-0.5mA -0.7 IC=-100 mA, IB=-5mA -0.9 VCE= -5V, IC= -2mA -0.75 VCE= -5V, IC= -10mA -0.82 DC current gain hFE VCE= -5V, IC= -2mA 125 800 Noise figure NF VCE=-5V,f=1MHz,Ic=0.2mA Rs=2KΩ,BW=200HZ 10 dB Collector output capacitance Cob VCB= -10V,f=1MHz 4.5 pF Transition frequency fT VCE= -5 V,IC=-10mA,f=100MHz 100 MHz V VBE(sat) V Base - emitter saturation voltage Base-emitter voltage VBE(on) Collector-emitter saturation voltage VCE(sat) -0.6 ■ Classification of hfe Type BC857AT BC857BT BC857CT Range 125-250 220-475 420-800 Marking 3E 3F 3G SOT-523 m m : t i n U 0.2 +0.05 -0.05 1.0 +0.1 -0.1 1.6 +0.1 -0.1 0.3±0.05 0.5 +0.1 -0.1 0.15±0.05 1 2 3 |
Numéro de pièce similaire - BC857AT |
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Description similaire - BC857AT |
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