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TP0606N3-G Fiches technique(PDF) 1 Page - Supertex, Inc

No de pièce TP0606N3-G
Description  P-Channel Enhancement-Mode Vertical DMOS FET
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Fabricant  SUTEX [Supertex, Inc]
Site Internet  http://www.supertex.com
Logo SUTEX - Supertex, Inc

TP0606N3-G Fiches technique(HTML) 1 Page - Supertex, Inc

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Supertex inc.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
TP0606
Features
Low threshold (-2.4V max.)
High input impedance
Low input capacitance (80pF typ.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
General Description
This low threshold, enhancement-mode (normally-off) transistor
utilizes a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination produces a
device with the power handling capabilities of bipolar transistors
and the high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
this device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
P-Channel Enhancement-Mode
Vertical DMOS FET
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
BV
DSS
Drain-to-gate voltage
BV
DGS
Gate-to-source voltage
±20V
Operating and storage temperature
-55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
TO-92 (N3)
GATE
SOURCE
DRAIN
TO-92 (N3)
Product Marking
Pin Configuration
Package may or may not include the following marks: Si or
Ordering Information
Device
Package
Wafer / Die Options
TO-92
NW
(Die in wafer form)
NJ
(Die on adhesive tape)
ND
(Die in waffle pack)
TP0606
TP0606N3-G
TP2506NW
TP2506NJ
TP2506ND
For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specification VF25 for layout and dimensions.
Product Summary
Device
BV
DSS/BVDGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(A)
V
GS(th)
(max)
(V)
TP0606N3-G
-60
3.5
-1.5
-2.4
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
SiTP
0606
YYWW


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