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FDD120AN15_F085 Fiches technique(PDF) 3 Page - Fairchild Semiconductor |
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FDD120AN15_F085 Fiches technique(HTML) 3 Page - Fairchild Semiconductor |
3 / 6 page FDD120AN15A0_F085 Rev. C1 www.fairchildsemi.com 3 Typical Characteristics Figure 1. Normalized Power Dissipation vs Case Temperature 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TC, CASE TEMPERATURE(oC) Figure 2. Maximum Continuous Drain Current vs Case Temperature 25 50 75 100 125 150 175 200 0 4 8 12 16 CURRENT LIMITED BY SILICON CURRENT LIMITED BY PACKAGE VGS = 10V TC, CASE TEMPERATURE(oC) Figure 3. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 SINGLE PULSE D = 0.50 0.20 0.10 0.05 0.02 0.01 t, RECTANGULAR PULSE DURATION(s) DUTY CYCLE - DESCENDING ORDER 2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC PDM t1 t2 Normalized Maximum Transient Thermal Impedance Figure 4. Peak Current Capability 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 100 1000 V GS = 10V SINGLE PULSE t, RECTANGULAR PULSE DURATION(s) TC = 25oC I = I2 175 - TC 150 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: |
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