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FDD120AN15_F085 Fiches technique(PDF) 3 Page - Fairchild Semiconductor

No de pièce FDD120AN15_F085
Description  N-Channel Power Trench짰 MOSFET
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD120AN15_F085 Fiches technique(HTML) 3 Page - Fairchild Semiconductor

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FDD120AN15A0_F085 Rev. C1
www.fairchildsemi.com
3
Typical Characteristics
Figure 1. Normalized Power Dissipation vs Case
Temperature
0
25
50
75
100
125
150
175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
25
50
75
100
125
150
175
200
0
4
8
12
16
CURRENT LIMITED
BY SILICON
CURRENT LIMITED
BY PACKAGE
VGS = 10V
TC, CASE TEMPERATURE(oC)
Figure 3.
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
0.1
1
SINGLE PULSE
D = 0.50
0.20
0.10
0.05
0.02
0.01
t, RECTANGULAR PULSE DURATION(s)
DUTY CYCLE - DESCENDING ORDER
2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TC
PDM
t1
t2
Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1
10
100
1000
V
GS = 10V
SINGLE PULSE
t, RECTANGULAR PULSE DURATION(s)
TC = 25oC
I = I2
175 - TC
150
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:


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