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BF1107_2015 Fiches technique(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd.

No de pièce BF1107_2015
Description  N-channel single gate MOS-FETs
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Fabricant  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
Site Internet  http://www.jmnic.com
Logo JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

BF1107_2015 Fiches technique(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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1999 May 14
3
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
BF1107; BF1107W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Soldering point of the gate lead.
STATIC CHARACTERISTICS
Tj =25 °C unless otherwise specified.
DYNAMIC CHARACTERISTICS
Common gate; Tamb =25°C.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VDS
drain-source voltage
3V
VSD
source-drain voltage
3V
VDG
drain-gate voltage
7V
VSG
source-gate voltage
7V
ID
drain current
10
mA
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point; note 1
260
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)GSS
gate-source breakdown voltage
VDS = 0; IGS = 0.1 mA
7
−−
V
VGSoff
gate-source pinch-off voltage
VDS =1V; ID =20 µA
−−3
−4.5
V
IDSX
drain-source leakage current
VGS = −5 V; VDS =2V
−−
10
µA
IGSS
gate cut-off current
VGS = −5 V; VDS =0
−−
100
nA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
S21(on)2 losses (on-state)
VSG =VDG = 0; RS =RL =50 Ω;
f = 50 to 860 MHz
−−
2.5
dB
VSG =VDG = 0; RS =RL =75 Ω;
f = 50 to 860 MHz
−−
3.5
dB
S
21(off)
2
isolation (off-state)
VSG =VDG =5V; RS =RL =50 Ω;
f = 50 to 860 MHz
30
−−
dB
VSG =VDG =5V; RS =RL =75 Ω;
f = 50 to 860 MHz
30
−−
dB
RDSon
drain-source on-resistance
VGS = 0; ID =1mA
12
20
Cig
input capacitance
VSG =VDG = 5 V; f = 1 MHz
0.9
pF
VSG =VDG = 0; f = 1 MHz
1.5
2
pF
Cog
output capacitance
VSG =VDG = 5 V; f = 1 MHz
0.9
pF
VSG =VDG = 0; f = 1 MHz
1.5
2
pF


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