Moteur de recherche de fiches techniques de composants électroniques |
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BF909WR_2015 Fiches technique(PDF) 7 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF909WR_2015 Fiches technique(HTML) 7 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
7 / 12 page 1997 Sep 05 7 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR VDS = 5 V; Tj =25 °C. RG1 = 120 kΩ (connected to VGG). Fig.11 Drain current as a function of gate 2 voltage; typical values; see Fig.17. handbook, halfpage 024 6 20 0 16 MLB944 12 8 4 I D (mA) 4.5 V 4 V 3.5 V 3 V V = 5 V GG V (V) G2 S Fig.12 Gate 1 current as a function of gate 2 voltage; typical values; see Fig.17. VDS = 5 V; Tj =25 °C. RG1 = 120 kΩ (connected to VGG). handbook, halfpage 02 46 40 30 10 0 20 MLB945 I G1 ( µA) V (V) G2 S 4.5 V 4 V 3.5 V 3 V V = 5 V GG Fig.13 Input admittance as a function of frequency; typical values. VDS = 5 V; VG2 =4V. ID = 15 mA; Tamb =25 °C. handbook, halfpage 10 3 MLB946 102 10 10 1 10 2 10 1 y is (mS) f (MHz) b is g is Fig.14 Reverse transfer admittance and phase as a function of frequency; typical values. VDS = 5 V; VG2 =4V. ID = 15 mA; Tamb =25 °C. 10 3 MLB947 102 10 10 3 10 2 10 1 y rs 10 3 10 10 1 2 rs ( µS) f (MHz) rs yrs (deg) ϕ ϕ |
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