Moteur de recherche de fiches techniques de composants électroniques |
|
FQPF12N60C Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
|
FQPF12N60C Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page 2 www.fairchildsemi.com FQP12N60C / FQPF12N60C Rev. B1 Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 11mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 12A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Device Marking Device Package Reel Size Tape Width Quantity FQP12N60C FQP12N60C TO-220 - - 50 FQPF12N60C FQPF12N60C TO-220F - - 50 Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 600 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C-- 0.5 -- V/ °C IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C -- -- -- -- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 6A -- 0.53 0.65 Ω gFS Forward Transconductance VDS = 40V, ID = 6A (Note 4) -- 13 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 1760 2290 pF Coss Output Capacitance -- 182 235 pF Crss Reverse Transfer Capacitance -- 21 28 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 300V, ID = 12A RG = 25Ω (Note 4, 5) -- 30 70 ns tr Turn-On Rise Time -- 85 180 ns td(off) Turn-Off Delay Time -- 140 280 ns tf Turn-Off Fall Time -- 90 190 ns Qg Total Gate Charge VDS = 400V, ID = 12A VGS = 10V (Note 4, 5) -- 48 63 nC Qgs Gate-Source Charge -- 8.5 -- nC Qgd Gate-Drain Charge -- 21 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 12 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 48 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 12A -- -- 1.4 V trr Reverse Recovery Time VGS = 0V, IS = 12A dIF/dt =100A/µs (Note 4) -- 420 -- ns Qrr Reverse Recovery Charge -- 4.9 -- µC |
Numéro de pièce similaire - FQPF12N60C |
|
Description similaire - FQPF12N60C |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |