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SBX2020 Fiches technique(PDF) 1 Page - Diotec Semiconductor

No de pièce SBX2020
Description  Schottky Barrier Rectifiers
Download  2 Pages
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Fabricant  DIOTEC [Diotec Semiconductor]
Site Internet  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

SBX2020 Fiches technique(HTML) 1 Page - Diotec Semiconductor

  SBX2020 Datasheet HTML 1Page - Diotec Semiconductor SBX2020 Datasheet HTML 2Page - Diotec Semiconductor  
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SBX2030 ... SBX2050
SBX2030 ... SBX2050
2nd Generation Bypass Diodes for Solar Modules – Schottky Barrier Rectifiers
2. Generation Bypass-Dioden für Solarmodule – Schottky-Barrier-Gleichrichter
Version 2014-07-18
Dimensions - Maße [mm]
Nominal current
Nennstrom
20 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
30...50 V
Plastic case
Kunststoffgehäuse
Ø 8 x 7.5 [mm]
Weight approx.
Gewicht ca.
2.0 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
On request taped on 13” reel
Green Molding
Standard Lieferform gegurtet in Ammo-Pack
Halogen-Free1
Auf Anfrage gegurtet auf 13” Rolle
Features
Vorteile
Up to 50V reverse voltage at low VF
Lowest value RthL for lowest Tj
Best trade-off between VF and IR 2)
1000pcs/13” reel for longer reel change intervals
Bis zu 50V Sperrspannung bei niedrigem VF
Niedrigster RthL Wert für niedrigstes Tj
Optimaler Kompromiss zwischen VF und IR 2)
1000 Stk. / 13” Rolle für längere Bestückungszyklen
Maximum ratings and characteristics
Grenz- und Kennwerte
Type
Typ
Repetitive / Surge peak reverse voltage
Periodische- / Spitzen-Sperrspannung
VRRM [V] / VRSM [V]
Forward Voltage
Durchlass-Spannung
VF [V] Tj = 125°C
Forward Voltage
Durchlass-Spannung
VF [V] Tj = 25°C
IF = 5 A
IF = 5 A
IF = 20 A
SBX2030
30
typ. 0.30
< 0.45
< 0.59
SBX2040
40
typ. 0.30
< 0.45
< 0.59
SBX2045
45
typ. 0.30
< 0.45
< 0.59
SBX2050
50
typ. 0.32
< 0.47
< 0.61
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 50°C
IFAV
20 A3)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
290/330 A
Rating for fusing – Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
420 A2s
Junction temperature – Sperrschichttemperatur
in DC forward mode – bei Gleichstrom-Durchlassbetrieb
Tj
Tj
-50...+150°C
≤ 200°C 2)
Storage temperature – Lagerungstemperatur
TS
-50...+175°C
1
From 1H/2012 – Ab 1H/2012
2
For more details, ask for the Diotec Application Note “Reliability of Bypass Diodes”
Weitere Infos in der Diotec Applikationsschrift „Reliability of Bypass Diodes”
3
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
Ø 1.6±0.05
Ø 8±0.1


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