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BYP60A05 Fiches technique(PDF) 1 Page - Diotec Semiconductor |
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BYP60A05 Fiches technique(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page BYP60A05 ... BYP60A6, BYP60K05 ... BYP60K6 BYP60A05 ... BYP60A6, BYP60K05 ... BYP60K6 Silicon-Press-Fit-Diodes – High Temperature Diodes Silizium-Einpress-Dioden – Hochtemperatur-Dioden Version 2014-08-18 Dimensions - Maße [mm] Nominal Current Nennstrom 60 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50 ... 600 V Metal press-fit case with plastic cover Metall-Einpressgehäuse mit Plastik-Abdeckung Weight approx. Gewicht ca. 10 g Compound has classification UL94V-0 Vergussmasse nach UL94V-0 klassifiziert Standard packaging: bulk Standard Lieferform: lose im Karton Maximum ratings Grenzwerte Type / Typ Wire to / Draht an Anode Cathode Repetive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] BYP60A05 BYP60K05 50 60 BYP60A1 BYP60K1 100 120 BYP60A2 BYP60K2 200 240 BYP60A3 BYP60K3 300 360 BYP60A4 BYP60K4 400 480 BYP60A6 BYP60K6 600 700 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 150°C IFAV 60 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 190 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 450/500 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 1000 A2s Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+215°C -50...+215°C 1 Max. case temperature TC = 150°C – Max. Gehäusetemperatur TC = 150°C © Diotec Semiconductor AG http://www.diotec.com/ 1 Ø 12.75 Ø ±0.5 11 1.3 |
Numéro de pièce similaire - BYP60A05_14 |
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Description similaire - BYP60A05_14 |
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