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CSD83325L Fiches technique(PDF) 3 Page - Texas Instruments |
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CSD83325L Fiches technique(HTML) 3 Page - Texas Instruments |
3 / 11 page CSD83325L www.ti.com SLPS494 – NOVEMBER 2014 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVS1S2 Source-to-Source Voltage VGS = 0 V, IS = 250 μA 12 V IS1S2 Source-to-Source Leakage Current VGS = 0 V, VS1S2 = 9.6 V 1 μA IGSS Gate-to-Source Leakage Current VS1S2 = 0 V, VGS = 10 V 10 µA VGS(th) Gate-to-Source Threshold Voltage VS1S2 = VGS, IS = 250 μA 0.75 0.95 1.25 V VGS = 2.5 V, IS = 5 A 14.0 17.5 23.0 m Ω RS1S2(on) Source-to-Source On-Resistance VGS = 3.8 V, IS = 5 A 8.8 10.9 13.0 m Ω VGS = 4.5 V, IS = 5 A 7.9 9.9 11.9 m Ω gƒs Transconductance VS1S2 = 1.2 V, IS = 5 A 36 S DYNAMIC CHARACTERISTICS(1) Ciss Input Capacitance 902 1170 pF Coss Output Capacitance VGS = 0 V, VS1S2 = 6 V, ƒ = 1 MHz 187 243 pF Crss Reverse Transfer Capacitance 111 144 pF Qg Gate Charge Total (4.5 V) 8.4 10.9 nC Qgd Gate Charge Gate-to-Drain 1.9 nC VS1S2 = 6 V, IS = 5 A Qgs Gate Charge Gate-to-Source 2.2 nC Qg(th) Gate Charge at Vth 0.6 nC Qoss Output Charge VS1S2 = 6 V, VGS = 0 V 2.9 nC td(on) Turn On Delay Time 205 ns tr Rise Time 353 ns VS1S2 = 6 V, VGS = 4.5 V, IS1S2 = 5 A, RG = 0 Ω td(off) Turn Off Delay Time 711 ns tƒ Fall Time 589 ns (1) Dynamic Characteristics values specified are per single FET. 5.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT Junction-to-Ambient Thermal Resistance(1) 150 RθJA °C/W Junction-to-Ambient Thermal Resistance(2) 55 (1) Device mounted on FR4 material with minimum Cu mounting area. (2) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu. Copyright © 2014, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: CSD83325L |
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