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SI4812BDY-E3 Fiches technique(PDF) 5 Page - Vishay Siliconix

No de pièce SI4812BDY-E3
Description  N-Channel 30-V (D-S) MOSFET with Schottky Diode
Download  9 Pages
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4812BDY-E3 Fiches technique(HTML) 5 Page - Vishay Siliconix

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Document Number: 73038
S-83039-Rev. D, 29-Dec-08
www.vishay.com
5
Vishay Siliconix
Si4812BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73038.
Normalized Thermal Transient Impedance, Junction-to-Ambient (MOSFET)
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10-4
10-3
10-2
10-1
10
100
600
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 72 °C/W
3. T JM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
1
Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky)
2
1
0.1
0.01
10-4
10-3
10-2
10-1
110
30
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
Square Wave Pulse Duration (s)


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