©

1996

PRELIMINARY DATA SHEET

GaAs MES FET

NE6500496

4 W L, S-BAND POWER GaAs FET

N-CHANNEL GaAs MES FET

DESCRIPTION

The NE6500496 is power GaAs FET which provides high

gain, high efficiency and high output power in L, S band.

To reduce thermal resistance, the device has a PHS

(Plated Heat Sink) structure.

FEATURES

•

Class A operation

•

High output power: 36 dBm (typ)

•

High gain: 11.5 dB (typ)

•

High power added efficiency: 45 % (typ)

•

Hermetically sealed ceramic package

Drain to Source Voltage

15

V

Gate to Drain Voltage

–18

V

Gate to Source Voltage

–12

V

Drain Current

4.5

A

Gate Current

25

mA

Total Power Dissipation

W

Channel Temperature

175

˚C

Storage Temperature

–65 to +175

˚C

Temperature Cycling

T

∞

–40 to +120

˚C

Caution

Please handle this device at a static-free workstation, because this is an electrostatic sensitive

device.

Document No. P10971EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

4.0 MIN BOTHLEADS

SOURCE

GATE

DRAIN

0.6 ±0.1

5.2 ±0.3

6.0 ±0.2

11.0 ±0.3

15.0 ±0.3

0.1

1.2

0.2 MAX.

1.0 ± 0.1

2.2 ±0.3

2 SLACES

φ

4.3 ±0.2

1.7 ±0.15

4.0

5.0 MAX.

PACKAGE DIMENSION (UNIT: mm)