Supertex inc.

Supertex inc.

www.supertex.com

TC6320

Doc.# DSFP-TC6320

D012913

Features

P-channels

Applications

N- and P-Channel

Enhancement-Mode MOSFET Pair

General Description

The Supertex TC6320 consists of high voltage, low threshold

N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN

packages. Both MOSFETs have integrated GATE-to-SOURCE

resistors and GATE-to-SOURCE Zener diode clamps which are

desired for high voltage pulser applications. It is a complimentary,

high-speed, high voltage, GATE-clamped N- and P-channel

MOSFET pair, which utilizes an advanced vertical DMOS

structure and Supertex’s well-proven silicon-gate manufacturing

process. This combination produces a device with the power

handling capabilities of bipolar transistors and with the high

input impedance and positive temperature coefficient inherent in

MOS devices. Characteristic of all MOS structures, this device

is free from thermal runaway and thermally induced secondary

breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, high breakdown voltage, high input impedance, low

input capacitance, and fast switching speeds are desired.

Typical Application Circuit

VSS

VL

VDD

VH

INA

INB

OE

-100V

+100V

Supertex

TC6320

10nF

10nF

Supertex

MD12xx, MD17xx, or MD18xx