STP13NK60Z datasheet(6/18 Pages) STMICROELECTRONICS

No de pièce	STP13NK60Z

Description	N-channel 600 V, 0.48, 13 A, TO-220, TO-220FP, D2PAK TO-247 Zener-protected SuperMESH Power MOSFET

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Electrical characteristics

STB13NK60ZT4, STx13NK60Z, STP13NK60ZFP

6/18

Doc ID 8527 Rev 7

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on delay time

Rise time

VDD= 300 V, ID= 5 A,

RG=4.7 Ω, VGS=10 V

(see Figure 20)

-

22

14

-

ns

td(off)

tf

Turn-off delay time

Fall time

VDD=300 V, ID= 5 A,

RG=4.7 Ω, VGS=10 V

(see Figure 20)

-

61

12

-

ns

tr(Voff)

tf

tc

Off-voltage rise time

Fall time

Cross-over time

VDD=480 V, ID= 10 A,

RG=4.7 Ω, VGS=10 V

(see Figure 20)

-

10

9

20

-

ns

Table 7.

Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

BVGSO

Gate-source breakdown

voltage

Igs=±1mA

(open drain)

30

-

V

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

(pulsed)

-

10

40

A

VSD

(2)

2.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

ISD = 10 A, VGS=0

-1.6

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD= 10 A,

di/dt = 100 A/µs,

VDD=35 V, Tj=150 °C

-

570

4.5

16

ns

µC

A

Numéro de pièce similaire - STP13NK60Z

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STP13NK60Z	657Kb / 14P	N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH?줡ower MOSFET
	STP13NK60Z	369Kb / 17P	N-CHANNEL 600V-0.48廓-13A-TO-220/FP-D짼/I짼PAK-TO-247 Zener-Protected SuperMESH??MOSFET
	STP13NK60Z	497Kb / 18P	N-channel 600 V, 0.48 廓, 13 A, TO-220, TO-220FP, D2PAK TO-247 Zener-protected SuperMESH??Power MOSFET
	STP13NK60ZFP	657Kb / 14P	N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH?줡ower MOSFET
	STP13NK60ZFP	369Kb / 17P	N-CHANNEL 600V-0.48廓-13A-TO-220/FP-D짼/I짼PAK-TO-247 Zener-Protected SuperMESH??MOSFET

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Description similaire - STP13NK60Z

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STB13NK60ZT4	497Kb / 18P	N-channel 600 V, 0.48 廓, 13 A, TO-220, TO-220FP, D2PAK TO-247 Zener-protected SuperMESH??Power MOSFET
	STF16NK60Z	751Kb / 15P	N-channel 600 V, 038 廓, 14 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH??Power MOSFET
	STB20NK50Z	613Kb / 18P	N-channel 500 V, 0.23 廓, 17 A SuperMESH??Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D2PAK
	STB9NK90Z	997Kb / 17P	N-channel 900 V, 1.1 廓, 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH??Power MOSFET
	STP6NK90Z	483Kb / 18P	N-channel 900V - 1.56廓 - 5.8A - TO-220/TO-220FP/D2PAK/TO-247 Zener-protected SuperMESH??Power MOSFET
	STB10NK60Z	860Kb / 19P	N-channel 650 V, 0.65 廓, 10 A, SuperMESH??Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247
	STB6NK60Z_0711	444Kb / 17P	N-channel 600 V - 1 廓 - 6 A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH??Power MOSFET
	STB11NK50Z	415Kb / 16P	N-channel 500 V, 0.48 廓 , 10 A TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET
	STP5NK100Z	435Kb / 16P	N-channel 1000V - 2.7??- 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESH??Power MOSFET
	STP9NK50Z	572Kb / 12P	N-CHANNEL 500V - 0.72ohm - 7.2A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH??Power MOSFET June 2002

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