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MC-4R128CEE6B-653 Fiches technique(PDF) 8 Page - NEC |
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MC-4R128CEE6B-653 Fiches technique(HTML) 8 Page - NEC |
8 / 16 page Preliminary Data Sheet M14539EJ1V1DS00 8 MC-4R128CEE6B, 4R128CEE6C Electrical Specification Absolute Maximum Ratings Symbol Parameter MIN. MAX. Unit VI,ABS Voltage applied to any RSL or CMOS signal pad with respect to GND −0.3 VDD + 0.3 V VDD,ABS Voltage on VDD with respect to GND −0.5 VDD + 1.0 V TSTORE Storage temperature −50 +100 °C Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. DC Recommended Electrical Conditions Symbol Parameter and conditions MIN. MAX. Unit VDD Supply voltage 2.50 − 0.13 2.50 + 0.13 V VCMOS CMOS I/O power supply at pad 2.5V controllers 2.5 − 0.13 2.5 + 0.25 V 1.8V controllers 1.8 − 0.1 1.8 + 0.2 VREF Reference voltage 1.4 − 0.2 1.4 + 0.2 V VIL RSL input low voltage VREF − 0.5 VREF − 0.2 V VIH RSL input high voltage VREF + 0.2 VREF + 0.5 V VIL,CMOS CMOS input low voltage −0.3 0.5VCMOS − 0.25 V VIH,CMOS CMOS input high voltage 0.5VCMOS+0.25 VCMOS + 0.3 V VOL,CMOS CMOS output low voltage, IOL,CMOS = 1 mA — 0.3 V VOH,CMOS CMOS output high voltage, IOH,CMOS = −0.25 mA VCMOS − 0.3 — V IREF VREF current, VREF,MAX −80.0 +80.0 µA ISCK,CMD CMOS input leakage current, (0 ≤ VCMOS ≤ VDD) −80.0 +80.0 µA ISIN,SOUT CMOS input leakage current, (0 ≤ VCMOS ≤ VDD) −10.0 +10.0 µA |
Numéro de pièce similaire - MC-4R128CEE6B-653 |
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Description similaire - MC-4R128CEE6B-653 |
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