2SK215 datasheet(2/6 Pages) HITACHI

No de pièce	2SK215

Description	Silicon N-Channel MOS FET

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Fabricant	HITACHI [Hitachi Semiconductor]

Site Internet	http://www.renesas.com/eng

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2 / 6 page

2SK213, 2SK214, 2SK215, 2SK216

2

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

2SK213

V

DSX

140

V

2SK214

160

2SK215

180

2SK216

200

Gate to source voltage

V

GSS

±15

V

Drain current

I

D

500

mA

Body to drain diode reverse drain current

I

DR

500

mA

Channel dissipation

Pch

1.75

W

Pch*

1

30

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–45 to +150

°C

Note:

1. Value at T

C =

25

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source

2SK213

V

(BR)DSX

140

—

V

I

D = 1 mA, VGS = –2 V

breakdown voltage

2SK214

160

—

V

2SK215

180

—

V

2SK216

200

—

V

Gate to source breakdown

voltag

V

(BR)GSS

±15

——V

I

G = ±10 µA, VDS = 0

Gate to source voltage

V

GS(on)

0.2

—

1.5

V

I

D = 10 mA, VDS = 10 V *

1

Drain to source saturation

voltage

V

DS(sat)

—

2.0

V

I

D = 10 mA, VGD = 0 *

1

Forward transfer admittance

|y

fs|

2040—

mS

I

D = 10 mA, VDS = 20 V *

1

Input capacitance

Ciss

—

90

—

pF

I

D = 10 mA, VDS = 10 V,

Reverse transfer capacitance

Crss

—

2.2

—

pF

f = 1 MHz

Note:

1. Pulse test

Numéro de pièce similaire - 2SK215

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	2SK215	65Kb / 6P	Silicon N Channel MOS FET
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Description similaire - 2SK215

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