2SK1336 datasheet(2/8 Pages) HITACHI

No de pièce	2SK1336

Description	Silicon N-Channel MOS FET

Download	8 Pages

Scroll/Zoom	100%

Fabricant	HITACHI [Hitachi Semiconductor]

Site Internet	http://www.renesas.com/eng

Logo

2 / 8 page

2SK1336

2

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

V

DSS

60

V

Gate to source voltage

V

GSS

±20

V

Drain current

I

D

0.3

A

Drain peak current

I

D(pulse)*

1

1.2

A

Body to drain diode reverse drain current

I

DR

0.3

A

Channel dissipation

Pch

400

mW

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Drain to source breakdown

voltage

V

(BR)DSS

60

——V

I

D = 10 mA, VGS = 0

Gate to source breakdown

voltage

V

(BR)GSS

±20

——V

I

G = ±100 µA, VDS = 0

Gate to source leak current

I

GSS

——

±10

µAV

GS = ±16 V, VDS = 0

Zero gate voltage drain current I

DSS

——50

µAV

DS = 50 V, VGS = 0

Gate to source cutoff voltage

V

GS(off)

1.0

—

2.0

V

I

D = 1 mA, VDS = 10 V

Static drain to source on state

resistance

R

DS(on)

—

1.3

1.7

Ω

I

D = 0.2 A, VGS = 10 V *

1

—

1.8

2.5

Ω

I

D = 0.2 A, VGS = 4 V *

1

Forward transfer admittance

|yfs|

0.22

0.35

—

S

I

D = 0.2 A, VDS = 10 V *

1

Input capacitance

Ciss

—

33

—

pF

V

DS = 10 V, VGS = 0,

Output capacitance

Coss

—

17

—

pF

f = 1 MHz

Reverse transfer capacitance

Crss

—

5

—

pF

Turn-on delay time

t

d(on)

—2

—ns

I

D = 0.2 A, VGS = 10 V,

Rise time

t

r

—4

—ns

R

L = 150 Ω

Turn-off delay time

t

d(off)

—18

—

ns

Fall time

t

f

—16

—

ns

Body to drain diode forward

voltage

V

DF

—

0.9

—

V

I

F = 0.3 A, VGS = 0

Body to drain diode reverse

recovery time

t

rr

—

45

—

ns

I

F = 0.3 A, VGS = 0,

di

F/dt = 50 A/µs

Note:

1. Pulse test

Numéro de pièce similaire - 2SK1336

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	2SK1336	74Kb / 7P	Silicon N Channel MOS FET
Renesas Technology Corp	2SK1336TZ-E	74Kb / 7P	Silicon N Channel MOS FET

More results

Description similaire - 2SK1336

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	HAT2088R	110Kb / 9P	Silicon N Channel MOS FET Silicon N Channel MOS FET
	H5N2802PF	123Kb / 9P	Silicon N Channel MOS FET Silicon N Channel MOS FET
	HAT2093R	79Kb / 6P	Silicon N Channel Power MOS FET Silicon N Channel Power MOS FET
Hitachi Semiconductor	2SK1157	49Kb / 9P	Silicon N-Channel MOS FET
	2SK1301	48Kb / 9P	Silicon N-Channel MOS FET
	2SK1328	33Kb / 6P	Silicon N-Channel MOS FET
	2SK1526	50Kb / 9P	Silicon N-Channel MOS FET
	2SK619	35Kb / 1P	SILICON N-CHANNEL MOS FET
	2SK1093	20Kb / 3P	Silicon N-Channel MOS FET
Panasonic Semiconductor	2SK1228	35Kb / 2P	Silicon N-Channel MOS FET
Panasonic Semiconductor	2SK615	35Kb / 2P	Silicon N-Channel MOS FET

More results

2SK1336 Fiches technique(PDF) 2 Page - Hitachi Semiconductor

2SK1336 Fiches technique(HTML) 2 Page - Hitachi Semiconductor

Numéro de pièce similaire - 2SK1336

Description similaire - 2SK1336

Html Pages

1 2 3 4 5 6 7 8

Fiches technique Télécharger

Lien URL