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ST3424 Fiches technique(PDF) 1 Page - Stanson Technology |
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ST3424 Fiches technique(HTML) 1 Page - Stanson Technology |
1 / 6 page ST3424 N Channel Enhancement Mode MOSFET 4.0A 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stnasontech.com STN3424 2014. V1 1 DESCRIPTION The ST3424 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high side switching . PIN CONFIGURATION SOT-23 1.Gate 2.Source 3.Drain PART MARKING SOT-23 Y: Year Code A: Process Code FEATURE l 60V/4.0A, RDS(ON) = 55mΩ @VGS = 10V l 60V/3.0A, RDS(ON) = 60mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOT-23 package design 3 1 2 D G S 3 1 2 24YA |
Numéro de pièce similaire - ST3424 |
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Description similaire - ST3424 |
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