Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

2SJ518 Fiches technique(PDF) 2 Page - Hitachi Semiconductor

No de pièce 2SJ518
Description  Silicon P Channel MOS FET High Speed Power Switching
Download  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  HITACHI [Hitachi Semiconductor]
Site Internet  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SJ518 Fiches technique(HTML) 2 Page - Hitachi Semiconductor

  2SJ518 Datasheet HTML 1Page - Hitachi Semiconductor 2SJ518 Datasheet HTML 2Page - Hitachi Semiconductor 2SJ518 Datasheet HTML 3Page - Hitachi Semiconductor 2SJ518 Datasheet HTML 4Page - Hitachi Semiconductor 2SJ518 Datasheet HTML 5Page - Hitachi Semiconductor 2SJ518 Datasheet HTML 6Page - Hitachi Semiconductor 2SJ518 Datasheet HTML 7Page - Hitachi Semiconductor 2SJ518 Datasheet HTML 8Page - Hitachi Semiconductor 2SJ518 Datasheet HTML 9Page - Hitachi Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 9 page
background image
2SJ518
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–60
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
–2
A
Drain peak current
I
D(pulse)
Note1
–4
A
Body-drain diode reverse drain current
I
DR
–2
A
Avalenche current
I
AP
Note2
–2
A
Avalenche energy
E
AR
0.34
mJ
Channel dissipation
Pch
Note3
1W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10µs, duty cycle ≤ 1 %
2. value at Tch = 25
°C, Rg ≥ 50 Ω
3. Value at when using the aluminaceramic board (12.5x20x0.7mm)
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
–60
V
I
D = –10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
——V
I
G = ±100µA, VDS = 0
Zero gate voltege drain current
I
DSS
–10
µAV
DS = –60 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
µAV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state
R
DS(on)
0.35
0.46
I
D = –1A, VGS = –10V
Note4
resistance
R
DS(on)
0.45
0.63
I
D = –1A, VGS = –4V
Note4
Forward transfer admittance
|y
fs|
1.2
2.0
S
I
D = –1A, VDS = –10V
Note4
Input capacitance
Ciss
220
pF
V
DS = –10V
Output capacitance
Coss
110
pF
V
GS = 0
Reverse transfer capacitance
Crss
35
pF
f = 1MHz
Turn-on delay time
t
d(on)
10
ns
V
GS = –10V, ID = –1A
Rise time
t
r
11
ns
R
L = 30Ω
Turn-off delay time
t
d(off)
—45
ns
Fall time
t
f
—30
ns
Body–drain diode forward voltage
V
DF
–1.05
V
I
D = –2A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
50
ns
I
F = –2A, VGS = 0
diF/ dt = 50A/
µs
Note:
4. Pulse test
5. Marking is “AZ”


Numéro de pièce similaire - 2SJ518

FabricantNo de pièceFiches techniqueDescription
logo
Renesas Technology Corp
2SJ518 RENESAS-2SJ518 Datasheet
83Kb / 7P
   Silicon P Channel MOS FET
logo
VBsemi Electronics Co.,...
2SJ518 VBSEMI-2SJ518 Datasheet
959Kb / 7P
   P-Channel 60-V (D-S) MOSFET
logo
Renesas Technology Corp
2SJ518AZTL-E RENESAS-2SJ518AZTL-E Datasheet
83Kb / 7P
   Silicon P Channel MOS FET
2SJ518AZTR-E RENESAS-2SJ518AZTR-E Datasheet
83Kb / 7P
   Silicon P Channel MOS FET
2SJ518 RENESAS-2SJ518_15 Datasheet
102Kb / 9P
   Silicon P Channel MOS FET
More results

Description similaire - 2SJ518

FabricantNo de pièceFiches techniqueDescription
logo
Hitachi Semiconductor
2SJ484 HITACHI-2SJ484 Datasheet
43Kb / 9P
   Silicon P-Channel MOS FET High Speed Power Switching
2SJ517 HITACHI-2SJ517 Datasheet
43Kb / 8P
   Silicon P Channel MOS FET High Speed Power Switching
2SJ534 HITACHI-2SJ534 Datasheet
52Kb / 9P
   Silicon P Channel MOS FET High Speed Power Switching
2SJ544 HITACHI-2SJ544 Datasheet
54Kb / 9P
   Silicon P Channel MOS FET High Speed Power Switching
2SJ174 HITACHI-2SJ174 Datasheet
571Kb / 4P
   SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
2SJ177 HITACHI-2SJ177 Datasheet
268Kb / 2P
   SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
2SJ220L HITACHI-2SJ220L Datasheet
171Kb / 1P
   SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
2SJ505 HITACHI-2SJ505 Datasheet
54Kb / 10P
   Silicon P Channel MOS FET High Speed Power Switching
2SJ506 HITACHI-2SJ506 Datasheet
50Kb / 10P
   Silicon P Channel MOS FET High Speed Power Switching
2SJ526 HITACHI-2SJ526 Datasheet
51Kb / 9P
   Silicon P Channel MOS FET High Speed Power Switching
2SJ527 HITACHI-2SJ527 Datasheet
54Kb / 9P
   Silicon P Channel MOS FET High Speed Power Switching
More results


Html Pages

1 2 3 4 5 6 7 8 9


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com