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2SJ505 Fiches technique(PDF) 4 Page - Hitachi Semiconductor |
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2SJ505 Fiches technique(HTML) 4 Page - Hitachi Semiconductor |
4 / 10 page 2SJ505(L), 2SJ505(S) 4 Main Characteristics 80 60 40 20 0 50 100 150 200 –100 –30 –10 –3 –1 –0.3 –0.1 –0.1 –0.3 –1 –3 –10 –100 –80 –60 –40 –20 0 –4 –8 –12 –16 –20 –4 V 0 –1–2–3 –4 –5 –30 –100 –1000 –300 –4.5 V –3 V –100 –80 –60 –40 –20 10 µ s 1 ms Ta = 25 °C –3.5 V DS V = –10 V Pulse Test 100 µs PW = 10 ms (1 shot) DC Operation (Tc = 25 °C) –8 V –5 V –10 V Tc = –25 °C Pulse Test V = –2.5 V GS 75 °C 25 °C Case Temperature Tc ( °C) Power vs. Temperature Derating Drain to Source Voltage V (V) DS Maximum Safe Operation Area Operation in this area is limited by R DS(on) Typical Output Characteristics Drain to Source Voltage V (V) DS Gate to Source Voltage V (V) GS Typical Transfer Characteristics |
Numéro de pièce similaire - 2SJ505 |
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Description similaire - 2SJ505 |
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