2SJ496 datasheet(3/10 Pages) HITACHI

No de pièce	2SJ496

Description	Silicon P-Channel MOS FET High Speed Power Switching

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Fabricant	HITACHI [Hitachi Semiconductor]

Site Internet	http://www.renesas.com/eng

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3 / 10 page

2SJ496

3

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown

voltage

V

(BR)DSS

–60

—

V

I

D = –10mA, VGS = 0

Gate to source breakdown

voltage

V

(BR)GSS

±20

——V

I

G = ±100µA, VDS = 0

Zero gate voltege drain

current

I

DSS

—

–10

µAV

DS = –60 V, VGS = 0

Gate to source leak current

I

GSS

——

±10

µAV

GS = ±16V, VDS = 0

Gate to source cutoff voltage

V

GS(off)

–1.0

—

–2.0

V

I

D = –1mA, VDS = –10V

Static drain to source on state

resistance

R

DS(on)

—

0.12

0.16

Ω

I

D = –2.5A

V

GS = –10V*

1

R

DS(on)

—

0.17

0.24

Ω

I

D = –2.5A

V

GS = –4V*

1

Forward transfer admittance

|y

fs|3

5

—

S

I

D = 2.5A, VDS = 10V*

1

Input capacitance

Ciss

—

600

—

pF

V

DS = –10V

Output capacitance

Coss

—

290

—

pF

V

GS = 0

Reverse transfer capacitance Crss

—

80

—

pF

f = 1MHz

Turn-on delay time

t

d(on)

—

10

—

ns

V

GS = –10V, ID = –2.5A

Rise time

t

r

—

25

—

ns

R

L = 12Ω

Turn-off delay time

t

d(off)

—95—

ns

Fall time

t

f

—55—

ns

Body to drain diode forward

voltage

V

DF

—

–1.0

—

V

I

D = –5A, VGS = 0

Body to drain diode reverse

recovery time

t

rr

—

65

—

ns

I

F = –5A, VGS = 0

diF/ dt = 50A/

µs

Note:

1. Pulse test

Numéro de pièce similaire - 2SJ496

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2SJ496 Fiches technique(PDF) 3 Page - Hitachi Semiconductor

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