Moteur de recherche de fiches techniques de composants électroniques |
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2SJ399 Fiches technique(PDF) 2 Page - Hitachi Semiconductor |
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2SJ399 Fiches technique(HTML) 2 Page - Hitachi Semiconductor |
2 / 7 page 2SJ399 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage V DSS –30 V Gate to source voltage V GSS ±20 V Drain current I D –0.2 A Drain peak current I D(pulse)* 1 –0.4 A Body to drain diode reverse drain current I DR –0.2 A Channel dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10% 2. Marking is “ZF–” Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V (BR)DSS –30 — — V I D = –100 µA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS —— ±2 µAV GS = ±16 V, VDS = 0 Zero gate voltage drain current I DSS —— –1 µAV DS = –30 V, VGS = 0 Gate to source cutoff voltage V GS(off) –1.0 — –2.0 V I D = –10 µA, VDS = –5 V Static drain to source on state resistance R DS(on) — 2.7 5.0 Ω I D = –20 mA V GS = –4 V* 1 — 2.0 3.0 Ω I D = –10 mA V GS = –10 V* 1 Input capacitance Ciss — 1.1 — pF V DS = –10 V Output capacitance Coss — 22.3 — pF V GS = 0 Reverse transfer capacitance Crss — 0.17 — pF f = 1 MHz Turn-on delay time t d(on) — 530 — ns I D = –0.1 A Rise time t r — 2170 — ns V GS = –10 V Turn-off delay time t d(off) — 7640 — ns R L = 100 Ω Fall time t f — 7690 — ns PW = 5 µs |
Numéro de pièce similaire - 2SJ399 |
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Description similaire - 2SJ399 |
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