2SJ363 datasheet(3/7 Pages) HITACHI

No de pièce	2SJ363

Description	Silicon P-Channel MOS FET

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Fabricant	HITACHI [Hitachi Semiconductor]

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2SJ363

3

2.0

1.5

1.0

0.5

0

50

100

150

200

Ambient Temperature

Ta (

°C)

Maximum Channel Power

Dissipation Curve

Drain to Source Voltage

V

(V)

DS

Maximum Safe Operation Area

–10

–3

–1

–0.3

–0.1

–0.03

–0.01

–0.1

–0.3

–1

–3

–10

–30

–100

100 µs

DC

Operation

Ta = 25 °C

Operation in

this area is

limited by RDS(on)

–2.0

–1.6

–1.2

–0.8

–0.4

0

–2

–4

–6

–8

–10

Drain to Source Voltage

V

(V)

DS

Typical Output Characteristics

Pulse Test

V

= –1.5 V

GS

–3

V

–2.5

V

–2 V

–4.5 V–4 V

–5

–4

–3

–2

–1

0

–1–2–3

–4

–5

Gate to Source Voltage

V

(V)

GS

Typical Transfer Characteristics

75 °C

25 °C

V

= –10 V

DS

Ta = –25 °C

Numéro de pièce similaire - 2SJ363

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VBsemi Electronics Co.,...	2SJ363	985Kb / 8P	P-Channel 30-V (D-S) MOSFET

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Description similaire - 2SJ363

Fabricant	No de pièce	Fiches technique	Description
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Renesas Technology Corp	2SJ181(L)	109Kb / 7P	Silicon P Channel MOS FET
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	2SJ518	102Kb / 9P	Silicon P Channel MOS FET
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	2SJ543	107Kb / 10P	Silicon P Channel MOS FET
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