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ST1413A Fiches technique(PDF) 1 Page - Stanson Technology |
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ST1413A Fiches technique(HTML) 1 Page - Stanson Technology |
1 / 7 page ST1413A P Channel Enhancement Mode MOSFET -3.4A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST1413A 2005. V1 DESCRIPTION ST1413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-353 ( SC-70-5L ) FEATURE -20V/-3.4A, RDS(ON) = 130m @VGS = -4.5V -20V/-2.0A, RDS(ON) = 150m @VGS = -2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-353 package design |
Numéro de pièce similaire - ST1413A |
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Description similaire - ST1413A |
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