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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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ST36N10D Fiches technique(PDF) 2 Page - Stanson Technology |
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ST36N10D Fiches technique(HTML) 2 Page - Stanson Technology |
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2 / 7 page  ST36N10D N Channel Enhancement Mode MOSFET 36.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. ST36N10D 2009. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID 36.0 14.0 A Pulsed Drain Current IDM 100 A Continuous Source Current (Diode Conduction) IS 2.7 A Power Dissipation TA=25℃ TA=70℃ PD 83 30 W Operation Junction Temperature TJ 175 ℃ Storgae Temperature Range TSTG -55/175 ℃ Thermal Resistance-Junction to Ambient RθJA 95 ℃/W |
Numéro de pièce similaire - ST36N10D |
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Description similaire - ST36N10D |
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