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ST12N10D Fiches technique(PDF) 1 Page - Stanson Technology |
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ST12N10D Fiches technique(HTML) 1 Page - Stanson Technology |
1 / 6 page ST12N10D N Channel Enhancement Mode MOSFET 12.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. ST12N10D 2009. V1 DESCRIPTION ST12N10D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST12N10D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO-252 PART MARKING Y: Year Code A: Produce Code O: Process Code FEATURE 100V/12.0A, RDS(ON) = 170mΩ(Typ.) @VGS = 10V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252 Package design |
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Description similaire - ST12N10D |
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