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74HCT2G66GD Fiches technique(PDF) 11 Page - NXP Semiconductors

No de pièce 74HCT2G66GD
Description  Dual single-pole single-throw analog switch
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

74HCT2G66GD Fiches technique(HTML) 11 Page - NXP Semiconductors

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74HC_HCT2G66
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 10 — 3 October 2013
11 of 23
NXP Semiconductors
74HC2G66; 74HCT2G66
Dual single-pole single-throw analog switch
[1]
There is no constraint on tr, tf with a 50 % duty factor when measuring fmax.
11.2 Additional dynamic characteristics
Test data is given in Table 11.
Definitions for test circuit:
RT = Termination resistance should be equal to output impedance Zo of the pulse generator.
CL = Load capacitance including jig and probe capacitance.
RL = Load resistance.
S1 = Test selection switch.
Fig 12. Test circuit for measuring switching times
VM
VM
tW
tW
10 %
90 %
0 V
VI
VI
negative
pulse
positive
pulse
0 V
VM
VM
90 %
10 %
tf
tr
tr
tf
001aad983
DUT
VCC
VCC
VI
VO
RT
RL
S1
CL
open
G
Table 11.
Test data
Type
Input
Load
S1 position
VI
tr, tf[1]
CL
RL
tPHL, tPLH
tPZH, tPHZ
tPZL, tPLZ
74HC2G66
GND to VCC
6 ns
50 pF
1 k
open
GND
VCC
74HCT2G66
GND to 3 V
6 ns
50 pF
1 k
open
GND
VCC
Table 12.
Additional dynamic characteristics for 74HC2G66 and 74HCT2G66
GND = 0 V; tr = tf = 6.0 ns; CL = 50 pF; unless otherwise specified. All typical values are measured at Tamb =25 C.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
THD
total harmonic
distortion
fi = 1 kHz; RL = 10 k; see Figure 13
%
VCC = 4.5 V; VI = 4.0 V (p-p)
-
0.04
-
%
VCC = 9.0 V; VI = 8.0 V (p-p)
-
0.02
-
%
fi =10kHz; RL = 10 k; see Figure 13
VCC = 4.5 V; VI = 4.0 V (p-p)
-
0.12
-
%
VCC = 9.0 V; VI = 8.0 V (p-p)
-
0.06
-
%


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