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FQD7N10TM Fiches technique(PDF) 1 Page - Fairchild Semiconductor

No de pièce FQD7N10TM
Description  100V N-Channel MOSFET
Download  9 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQD7N10TM Fiches technique(HTML) 1 Page - Fairchild Semiconductor

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©2008 Fairchild Semiconductor International
Rev. A3, October 2008
FQD7N10 / FQU7N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state
resistance,
provide
superior
switching
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as audio
amplifiers, high efficiency switching DC/DC converters, and
DC motor control.
Features
• 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V
• Low gate charge ( typical 5.8 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
FQD7N10 / FQU7N10
Units
VDSS
Drain-Source Voltage
100
V
ID
Drain Current
- Continuous (TC = 25°C)
5.8
A
- Continuous (TC = 100°C)
3.67
A
IDM
Drain Current
- Pulsed
(Note 1)
23.2
A
VGSS
Gate-Source Voltage
± 25
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
50
mJ
IAR
Avalanche Current
(Note 1)
5.8
A
EAR
Repetitive Avalanche Energy
(Note 1)
2.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
6.0
V/ns
PD
Power Dissipation (TA = 25°C) *
2.5
W
Power Dissipation (TC = 25°C)
25
W
- Derate above 25°C
0.2
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
°C
Symbol
Parameter
Typ
Max
Units
RθJC
Thermal Resistance, Junction-to-Case
--
5.0
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient *
--
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
110
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
! "
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S
D
G
I-PAK
FQU Series
D-PAK
FQD Series
G
S
D
G
S
D
October 2008
QFET
®
• RoHS Compliant


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