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FQD7N10TM Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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FQD7N10TM Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2008 Fairchild Semiconductor International Rev. A3, October 2008 FQD7N10 / FQU7N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control. Features • 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V • Low gate charge ( typical 5.8 nC) • Low Crss ( typical 10 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQD7N10 / FQU7N10 Units VDSS Drain-Source Voltage 100 V ID Drain Current - Continuous (TC = 25°C) 5.8 A - Continuous (TC = 100°C) 3.67 A IDM Drain Current - Pulsed (Note 1) 23.2 A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 50 mJ IAR Avalanche Current (Note 1) 5.8 A EAR Repetitive Avalanche Energy (Note 1) 2.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns PD Power Dissipation (TA = 25°C) * 2.5 W Power Dissipation (TC = 25°C) 25 W - Derate above 25°C 0.2 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 5.0 °C/W RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ! " ! ! ! " " " ! " ! ! ! " " " S D G I-PAK FQU Series D-PAK FQD Series G S D G S D October 2008 QFET ® • RoHS Compliant |
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