Data Sheet D14264EJ1V0DS00

7

2SK3325

PACKAGE DRAWINGS (Unit : mm)

1)TO-220AB (MP-25)

2)TO-262 (MP-25 Fin Cut)

3)TO-263 (MP-25ZJ)

EQUIVALENT CIRCUIT

4.8 MAX.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1 2 3

10.6 MAX.

10.0

3.6±0.2

4

1.3±0.2

0.75±0.1

2.54 TYP.

2.54 TYP.

1.3±0.2

0.5±0.2

2.8±0.2

φ

4.8 MAX.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1

2

3

(10)

4

1.3±0.2

0.75±0.3

2.54 TYP.

2.54 TYP.

1.3±0.2

0.5±0.2

2.8±0.2

(10)

1.4±0.2

2.54 TYP.

2.54 TYP.

123

4

4.8 MAX.

1.3±0.2

0.5±0.2

(0.5R)

(0.8R)

1.Gate

2.Drain

3.Source

4.Fin (Drain)

0.7±0.2

Source

Body

Diode

Gate

Drain

Remark

Strong electric field, when exposed to this device, can cause destruction of the gate oxide and

ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as

much as possible, and quickly dissipate it once, when it has occurred.