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2SK3109 Fiches technique(PDF) 1 Page - NEC |
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2SK3109 Fiches technique(HTML) 1 Page - NEC |
1 / 8 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. © 1998, 2000 MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Document No. D13332EJ1V0DS00 (1st edition) Date Published January 2000 NS CP (K) Printed in Japan DATA SHEET The mark 5 shows major revised points. DESCRIPTION The 2SK3109 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • Gate voltage rating ±30 V • Low on-state resistance RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 5.0 A) • Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V) • Avalanche capability rated • Built-in gate protection diode • Surface mount device available ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to source voltage (VGS = 0 V) VDSS 200 V Gate to source voltage (VDS = 0 V) VGSS ±30 V Drain current (DC) (TC = 25 °C) ID(DC) ±10 A Drain current (pulse) Note1 ID(pulse) ±30 A Total power dissipation (TA = 25 °C) PT1 1.5 W Total power dissipation (TC = 25 °C) PT2 50 W Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C Single avalanche current Note2 IAS 10 A Single avalanche energy Note2 EAS 35 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Starting Tch = 25 °C, VDD = 100 V, RG = 25 Ω, VGS = 20 V→0 V ORDERING INFORMATION PART NUMBER PACKAGE 2SK3109 TO-220AB 2SK3109-S TO-262 2SK3109-ZJ TO-263 |
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Description similaire - 2SK3109 |
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