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STF1N105K3 Fiches technique(PDF) 4 Page - STMicroelectronics |
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STF1N105K3 Fiches technique(HTML) 4 Page - STMicroelectronics |
4 / 18 page Electrical characteristics STF1N105K3, STFW1N105K3, STP1N105K3 4/18 Doc ID 023509 Rev 2 2 Electrical characteristics (T CASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS Drain-source breakdown voltage I D = 1 mA, V GS = 0 1050 V I DSS Zero gate voltage drain current (V GS = 0) V DS = 1050 V, V DS = 1050 V, Tc=125 °C 1 50 μA μA I GSS Gate body leakage current (V DS = 0) V GS = ± 20 V ±50 μA V GS(th) Gate threshold voltage V DS = V GS , I D = 50 μA2 3 4.5 V R DS(on) Static drain-source on- resistance V GS = 10 V, I D = 0.6 A 8 11 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance V DS =100 V, f=1 MHz, V GS =0 - 180 - pF C oss Output capacitance 15 pF C rss Reverse transfer capacitance 1pF C o(tr) (1) 1. Time related is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS Equivalent capacitance time related V GS = 0, V DS = 0 to 840 V -11 - pF C o(er) (2) 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss when V DS increases from 0 to 80% V DSS Equivalent capacitance energy related -7 - pF R G Intrinsic gate resistance f = 1 MHz open drain - 18 - Ω Q g Q gs Q gd Total gate charge Gate-source charge Gate-drain charge V DD = 840 V, I D = 1.2 A V GS =10 V (see Figure 18) - 13 1.6 8 - nC nC nC |
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