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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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2SK2808 Fiches technique(PDF) 1 Page - Fuji Electric |
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2SK2808 Fiches technique(HTML) 1 Page - Fuji Electric |
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1 / 3 page  2SK2808-01MR N-channel MOS-FET FAP-IIS Series 30V 20m Ω ±35A 20W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V DS 30 V Continous Drain Current I D ±35 A Pulsed Drain Current I D(puls) ±140 A Gate-Source-Voltage V GS ±16 V Max. Avalanche Energy E AV 129.3 mJ Max. Power Dissipation P D 20 W Operating and Storage Temperature Range T ch 150 °C T stg -55 ~ +150 °C L=0.70mH,Vcc=12V - Electrical Characteristics (TC=25°C), unless otherwise specified Item Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown-Voltage BV DSS ID=1mA VGS=0V 30 V Gate Threshhold Voltage V GS(th) ID=1mA VDS=VGS 1,0 1,5 2,0 V Zero Gate Voltage Drain Current I DSS VDS=30V Tch=25°C 10 500 µA VGS=0V Tch=125°C 0,2 1,0 mA Gate Source Leakage Current I GSS VGS=±16V VDS=0V 10 100 nA Drain Source On-State Resistance R DS(on) ID=17,5A VGS=4V 22 30 m Ω VGS=10V 14 20 m Ω Forward Transconductance g fs ID=17,5A VDS=25V 16 33 S Input Capacitance C iss VDS=25V 1100 1650 pF Output Capacitance C oss VGS=0V 550 830 pF Reverse Transfer Capacitance C rss f=1MHz 240 360 pF Turn-On-Time ton (ton=td(on)+tr) t d(on) VCC=15V 9 15 ns t r ID=35A 75 115 ns Turn-Off-Time toff (ton=td(off)+tf) t d(off) VGS=10V 15 23 ns t f RGS=10 Ω 50 75 ns Avalanche Capability I AV L = 100µH Tch=25°C 35 A Diode Forward On-Voltage V SD IF=2xIDR VGS=0V Tch=25°C 0,98 1,71 V Reverse Recovery Time t rr IF=2xIDR VGS=0V 50 ns Reverse Recovery Charge Q rr -dIF/dt=100A/µs Tch=25°C 0,08 µC - Thermal Characteristics Item Symbol Test conditions Min. Typ. Max. Unit Thermal Resistance R th(ch-c) channel to case 6,25 °C/W R th(ch-a) channel to air 62,5 °C/W |
Numéro de pièce similaire - 2SK2808 |
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Description similaire - 2SK2808 |
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