2SK1959 datasheet(1/6 Pages) NEC

No de pièce	2SK1959

Description	N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

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©

1996

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK1959

The 2SK1959 is an N-channel vertical MOS FET. Because

it can be driven by a voltage as low as 1.5 V and it is not

necessary to consider a drive current, this FET is ideal as an

actuator for low-current portable systems such as headphone

stereos and video cameras.

FEATURES

•

Gate can be driven by 1.5 V

•

Low ON resistance

RDS(on) = 3.2

Ω MAX. @ VGS = 1.5 V, ID = 50 mA

RDS(on) = 0.5

Ω MAX. @ VGS = 4.0 V, ID = 1.0 A

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PARAMETER

SYMBOL

TEST CONDITIONS

RATING

UNIT

Drain to Source Voltage

VDSS

VGS = 0

16

V

Gate to Source Voltage

VGSS

VDS = 0

±7.0

V

Drain Current (DC)

ID(DC)

±2.0

A

Drain Current (Pulse)

ID(pulse)

PW

≤ 10 ms, duty cycle ≤ 50 %

±4.0

A

Total Power Dissipation

PT

16 cm2

× 0.7 mm ceramic substrate used

2.0

W

Channel Temperature

Tch

150

˚C

Storage Temperature

Tstg

–55 to +150

˚C

Document No. D11222EJ2V0DS00 (2nd edition)

Date Published June 1996 P

Printed in Japan

PACKAGE DIMENSIONS (in mm)

1.6 ±0.2

4.5 ±0.1

0.42 ±0.06

1.5

0.47

±0.06

3.0

0.41

+0.03

–0.05

1.5 ±0.1

S

D

G

0.42 ±0.06

Marking: NQ

EQUIVALENT CURCUIT

Source (S)

Internal

diode

Gate

protection

diode

Gate (G)

Drain (D)

PIN CONNECTIONS

S:

D:

G:

Source

Drain

Gate

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

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