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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRF7807VD2PbF Fiches technique(PDF) 2 Page - International Rectifier |
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IRF7807VD2PbF Fiches technique(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF7807VD2PbF 2 www.irf.com Parameter Min Typ Max Units Conditions Drain-to-Source BV DSS 30 – – V V GS = 0V, ID = 250µA Breakdown Voltage Static Drain-Source R DS(on) 17 25 m Ω V GS = 4.5V, ID = 7.0A on Resistance Gate Threshold Voltage V GS(th) 1.0 V V DS = VGS,ID = 250µA Drain-Source Leakage I DSS 50 µA V DS = 24V, VGS = 0 Current* 6.0 mA V DS = 24V, VGS = 0, Tj = 100°C Gate-Source Leakage I GSS ±100 nA V GS = ±20V Current* Total Gate Charge* Q G 9.5 14 V GS=4.5V, I D=7.0A Pre-Vth Q GS1 2.3 Gate-Source Charge V DS = 16V Post-Vth Q GS2 1.0 nC Gate-Source Charge Gate to Drain Charge Q GD 2.4 Switch Chg(Q gs2 + Qgd) Q sw 3.4 5.2 Output Charge* Q oss 12 16.8 V DS = 16V, VGS = 0 Gate Resistance R G 2.0 Ω Turn-on Delay Time t d (on) 6.3 V DD = 16V, ID = 7.0A Rise Time t r 1.2 ns V GS = 5V, R G= 2Ω Turn-off Delay Time t d (off) 11 Resistive Load Fall Time t f 2.2 Electrical Characteristics Current Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board 50% Duty Cycle, Rectangular
Typical values of RDS(on) measured at V GS = 4.5V, QG, QSW and QOSS measured at V GS = 5.0V, IF = 7.0A. * Device are 100% tested to these parameters. Schottky Diode & Body Diode Ratings and Characteristics Parameter Min Typ Max Units Conditions Diode Forward Voltage V SD 0.54 V T j = 25°C, Is = 3.0A, VGS =0V 0.43 T j = 125°C, Is = 3.0A, VGS =0V Reverse Recovery Time trr 36 ns T j = 25°C, Is = 7.0A, VDS = 16V Reverse Recovery Charge Qrr 41 nC di/dt = 100A/µs Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD) |
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Description similaire - IRF7807VD2PbF |
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