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BZX55C91 Fiches technique(PDF) 1 Page - Continental Device India Limited

No de pièce BZX55C91
Description  SILIICON PLANAR ZENER DIODES
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Fabricant  CDIL [Continental Device India Limited]
Site Internet  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

BZX55C91 Fiches technique(HTML) 1 Page - Continental Device India Limited

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SILIICON PLANAR ZENER DIODES
BZX55C
2.4V to 120V
500mW
DO- 35
Glass Axial Package
Best suited for Industrial, Military and Space Applications. The glass passivated diode chip in the
hermetically sealed glass package with double studs provides excellent stability and reliability.
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
SYMBOL
PTA
PS
Tj
Tstg
Rth(j-a)
(1) On infinite heatsink with 4mm lead length.
Forward Voltage @ IF=200mA (BZX55C 2.4V - 27V)
VF
Forward Voltage @ IF=200mA (BZX55C 30V - 120V)
VF
ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise)
Device
VZT
rZT
IZT
rZK
IZK
Temp. Coeff
IR @
VR
@ IZT*
@ IZT*
@ IZK
of
Tamb
Zener Voltage
25°C
150°C
min
max
max
max
typ
max
max
(V)
(V)
(
Ω) (mA)
(
Ω)
(mA)
(%/°C)
(
µµA)
(
µµA)
(V)
BZX55C 2V4
2.28
2.56
85
5.0
600
1.0
-0.07
50
100
1.0
BZX55C 2V7
2.50
2.90
85
5.0
600
1.0
-0.07
10
50
1.0
BZX55C 3V0
2.80
3.20
85
5.0
600
1.0
-0.07
4.0
40
1.0
BZX55C 3V3
3.10
3.50
85
5.0
600
1.0
-0.06
2.0
40
1.0
BZX55C 3V6
3.40
3.80
85
5.0
600
1.0
-0.06
2.0
40
1.0
BZX55C 3V9
3.70
4.10
85
5.0
600
1.0
-0.05
2.0
40
1.0
BZX55C 4V3
4.00
4.60
75
5.0
600
1.0
-0.03
1.0
20
1.0
BZX55C 4V7
4.40
5.00
60
5.0
600
1.0
-0.01
0.5
10
1.0
BZX55C 5V1
4.80
5.40
35
5.0
550
1.0
+0.01
0.1
2.0
1.0
BZX55C 5V6
5.20
6.00
25
5.0
450
1.0
+0.03
0.1
2.0
1.0
BZX55C 6V2
5.80
6.60
10
5.0
200
1.0
+0.04
0.1
2.0
2.0
BZX55C 6V8
6.40
7.20
8
5.0
150
1.0
+0.05
0.1
2.0
3.0
BZX55C 7V5
7.00
7.90
7
5.0
50
1.0
+0.05
0.1
2.0
5.0
BZX55C 8V2
7.70
8.70
7
5.0
50
1.0
+0.06
0.1
2.0
6.2
BZX55C 9V1
8.50
9.60
10
5.0
50
1.0
+0.06
0.1
2.0
6.8
BZX55C 10
9.40
10.60
15
5.0
70
1.0
+0.07
0.1
2.0
7.5
BZX55C 11
10.40
11.60
20
5.0
70
1.0
+0.07
0.1
2.0
8.2
BZX55C 12
11.40
12.70
20
5.0
90
1.0
+0.07
0.1
2.0
9.1
BZX55C 13
12.40
14.10
26
5.0
110
1.0
+0.07
0.1
2.0
10
BZX55C2V4_120V Rev_3 050604E
*Pulse Condition : 20ms < tp <50ms . Duty Cycle <2%
Thermal Resistance Junction to Ambient (1)
max
mW
W
°C
°C/mW
VALUE
500
5.0
175
0.3
- 65 to +175
UNIT
DESCRIPTION
1.2
1.5
V
V
Surge Power Dissipation Pulse Width=10 ms
Power Dissipation (1)
Junction Temperature
Storage Temperature
°C
IZM
Tamb
50°C
(mA)
155
135
125
115
105
95
90
85
80
70
64
58
53
47
43
40
36
32
29
Continental Device India Limited
Data Sheet
Page 1 of 4
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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