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2SJ495 Fiches technique(PDF) 4 Page - NEC

No de pièce 2SJ495
Description  SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
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Fabricant  NEC [NEC]
Site Internet  http://www.nec.com/
Logo NEC - NEC

2SJ495 Fiches technique(HTML) 4 Page - NEC

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2SJ495
4
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
0
–10
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - °C
ID - Drain Current - A
40
–1
10
0.001
0.01
0.1
1
100
1 000
1 m
10 m
100 m
1
10
100
1 000
10
µµ
100
VDS = –10 V
Pulsed
–1
–10
10
100
1000
–100
–1000
50
–20
–30
Pulsed
60
–10
–100
Pulsed
0
VDS = –10 V
ID = –1 mA
–50
0
50
100
150
0
1
Single Pulse
–1.0
–2.0
150
100
80
VGS = –10 V
VGS = –4 V
Tch=–25°C
25°C
75°C
125°C
ID = –15 A
–1.5
–0.5
20
Rth(ch-a) = 62.5°C/W
Rth(ch-c) = 3.57°C/W


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