2N3497 datasheet(1/4 Pages) CDIL

No de pièce	2N3497

Description	PNP SILICON PLANAR SWITCHING TRANSISTORS

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Fabricant	CDIL [Continental Device India Limited]

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PNP SILICON PLANAR SWITCHING TRANSISTORS

2N3496

2N3497

TO-18

Metal Can Package

General Purpose Transistors for Switching and Linear Applications.

DC Amplilfier & Driver For Industrial Applications

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

2N3496

2N3497

UNIT

Collector Emitter Voltage

VCEO

80

120

V

Collector Base Voltage

VCBO

80

120

V

Emitter Base Voltage

VEBO

V

Collector Current Continuous

IC

mA

Power Dissipation @Ta=25ºC

PD

mW

Derate Above 25ºC

mW/ºC

Power Dissipation @ Tc=25ºC

PD

W

Derate Above 25ºC

mW/ºC

Operating and Storage Junction

Tj, Tstg

ºC

Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )

DESCRIPTION

SYMBOL TEST CONDITION

MIN

MAX

MIN

MAX

UNIT

Collector Emitter Breakdown Voltage

BVCEO*IC=10mA,IB=0

80

120

V

Collector Base Breakdown Voltage

BVCBO

IC=10µA.IE=0

80

120

V

Emitter Base Breakdown Voltage

BVEBO

IE=10µA, IC=0

4.5

V

Collector Cut off Current

ICBO

VCB=50V, IE=0

100

nA

VCB=90V, IE=0

100

nA

Emitter Cut off Current

IEBO

VEB=3V, IC=0

25

nA

Collector Emitter Saturation Voltage

VCE(Sat) IC=10mA,IB=1mA

0.3

0.35

V

Base Emitter Saturation Voltage

VBE(Sat)

IC=10mA,IB=1mA

0.6

0.9

0.6

0.9

V

DC curent Gain

hFE

IC=0.1mA,VCE=10V

35

IC=1mA,VCE=10V

40

IC=10mA,VCE=10V

40

IC=50mA,VCE=10V

40

IC=100mA,VCE=10V*

35

<---------------------1.2----------------->

<--------------------6.85----------------->

<--------------------100------------------->

<---------------------4.5------------------>

<---------------------400-------------------

<-------------------2.28----------------->

-65 to +200

2N3496

2N3497

Q

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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