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2N3497 Fiches technique(PDF) 1 Page - Continental Device India Limited |
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2N3497 Fiches technique(HTML) 1 Page - Continental Device India Limited |
1 / 4 page PNP SILICON PLANAR SWITCHING TRANSISTORS 2N3496 2N3497 TO-18 Metal Can Package General Purpose Transistors for Switching and Linear Applications. DC Amplilfier & Driver For Industrial Applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL 2N3496 2N3497 UNIT Collector Emitter Voltage VCEO 80 120 V Collector Base Voltage VCBO 80 120 V Emitter Base Voltage VEBO V Collector Current Continuous IC mA Power Dissipation @Ta=25ºC PD mW Derate Above 25ºC mW/ºC Power Dissipation @ Tc=25ºC PD W Derate Above 25ºC mW/ºC Operating and Storage Junction Tj, Tstg ºC Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION MIN MAX MIN MAX UNIT Collector Emitter Breakdown Voltage BVCEO*IC=10mA,IB=0 80 120 V Collector Base Breakdown Voltage BVCBO IC=10µA.IE=0 80 120 V Emitter Base Breakdown Voltage BVEBO IE=10µA, IC=0 4.5 4.5 V Collector Cut off Current ICBO VCB=50V, IE=0 100 nA VCB=90V, IE=0 100 nA Emitter Cut off Current IEBO VEB=3V, IC=0 25 25 nA Collector Emitter Saturation Voltage VCE(Sat) IC=10mA,IB=1mA 0.3 0.35 V Base Emitter Saturation Voltage VBE(Sat) IC=10mA,IB=1mA 0.6 0.9 0.6 0.9 V DC curent Gain hFE IC=0.1mA,VCE=10V 35 35 IC=1mA,VCE=10V 40 40 IC=10mA,VCE=10V 40 40 IC=50mA,VCE=10V 40 40 IC=100mA,VCE=10V* 35 <---------------------1.2-----------------> <--------------------6.85-----------------> <--------------------100-------------------> <---------------------4.5------------------> <---------------------400------------------- <-------------------2.28-----------------> -65 to +200 2N3496 2N3497 Q Continental Device India Limited Data Sheet Page 1 of 4 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
Numéro de pièce similaire - 2N3497 |
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Description similaire - 2N3497 |
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